KSD1417 Datasheet | Fairchild Semiconductor

High Power Switching Applications - High DC Current Gain - Low Collector-Emitter Saturation Voltage - plement to KSB1022 TO-220F 2.Collector 3.Emitter 1.Base NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 60 60 5 7 10 0.7 2 30 150 -55 ~ 150 Units V V V A A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) t ON t STG t F Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition IC = 50m A, IB = 0 VCB = 60V, IE = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 3A VCE = 3V, IC = 7A IC = 3A, IB = 6m A IC = 7A, IB = 14m A IC = 3A, IB = 6m A VCC = 45V, IC = 4.5A IB1 = -IB2 = 6m A RL = 10Ω 2K 1K 0.9 1.2 1.5 0.8 3 2.5 Min. 60 Typ. Max. 100 3 15K 1.5 2 2.5 V V V µs µs µs Units V µA m A ©2000 Fairchild Semiconductor International Rev. A, February 2000 Typical Characteristics 10k VCE = 3V IC[A], COLLECTOR CURRENT IB = 1.4m A IB = 1.2m A IB = 1m A IB = 0.8m A h FE, DC CURRENT GAIN 1k IB = 0.6m A IB = 0.4m A IB = 0.2m A 0 0 2 4 6 8 IB = 0 10 100 0.1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Ic = 500...