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Fairchild Semiconductor Electronic Components Datasheet

KSD1417 Datasheet

High Power Switching Applications

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KSD1417
High Power Switching Applications
• High DC Current Gain
• Low Collector-Emitter Saturation Voltage
• Complement to KSB1022
1 TO-220F
1.Base 2.Collector 3.Emitter
NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
h FE1
hFE2
VCE(sat)
VBE(sat)
tON
tSTG
tF
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
IC = 50mA, IB = 0
VCB = 60V, IE = 0
VEB = 5V, IC = 0
VCE = 3V, IC = 3A
VCE = 3V, IC = 7A
IC = 3A, IB = 6mA
IC = 7A, IB = 14mA
IC = 3A, IB = 6mA
VCC = 45V, IC = 4.5A
IB1 = -IB2 = 6mA
RL = 10
Value
60
60
5
7
10
0.7
2
30
150
-55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Min.
60
2K
1K
Typ.
0.9
1.2
1.5
0.8
3
2.5
Max.
100
3
15K
Units
V
µA
mA
1.5 V
2V
2.5 V
µs
µs
µs
©2000 Fairchild Semiconductor International
Rev. A, February 2000


Fairchild Semiconductor Electronic Components Datasheet

KSD1417 Datasheet

High Power Switching Applications

No Preview Available !

Typical Characteristics
10
8
IB = 1.4mA
IB = 1.2mA
6
IB = 1mA
IB = 0.8mA
4 IB = 0.6mA
IB = 0.4mA
2
IB = 0.2mA IB = 0
0
0 2 4 6 8 10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
Ic = 500 IB
VBE(sat)
1
VCE(sat)
0.1
0.1
1 10
IC[A], COLLECTOR CURRENT
100
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
ICmax(pulse)
10
ICmax(DC)
1
100mS10ms 1mS
DC
100uS
0.1
0.01
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
10k
VCE = 3V
1k
100
0.1
1 10
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
100
10
9
8
7
6
5
4
3
2
1
0
0.0
VCE = 3V
0.4 0.8 1.2 1.6 2.0 2.4 2.8
VBE[V], BASE-EMITTER VOLTAGE
3.2
Figure 4. Base-Emitter On Voltage
40
35
30
25
20
15
10
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000


Part Number KSD1417
Description High Power Switching Applications
Maker Fairchild Semiconductor
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KSD1417 Datasheet PDF





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