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Fairchild Semiconductor Electronic Components Datasheet

KSD1616A Datasheet

NPN Epitaxial Silicon Transistor

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February 2015
KSD1616A
NPN Epitaxial Silicon Transistor
Features
• Audio Frequency Power Amplifier and Medium Speed Switching
• Complement to KSB1116 / KSB1116A
Ordering Information
Part Number
KSD1616AYTA
KSD1616AGBU
KSD1616AGTA
KSD1616ALTA
Top Mark
D1616A
D1616A
D1616A
D1616A
1 TO-92
1. Emitter 2. Collector 3. Base
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Ammo
Bulk
Ammo
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
ICP
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)(1)
Junction Temperature
Storage Temperature
120
60
6
1
2
150
-55 to 150
V
V
V
A
A
°C
°C
Note:
1. Pulse width 10 ms, duty cycle < 50%
© 2002 Fairchild Semiconductor Corporation
KSD1616A Rev. 1.6
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

KSD1616A Datasheet

NPN Epitaxial Silicon Transistor

No Preview Available !

Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max.
Unit
Total Device Dissipation
PD Derate Above 25°C
0.75
6
W
mW/°C
RθJA
Thermal Resistance, Junction-to-Ambient
160 °C/W
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VBE(on)
VCE(sat)
VBE(sat)
Cob
Collector-Base Breakdown Voltage IC = 100 μA, IE = 0
Collector-Emitter Breakdown Voltage IC = 1 mA, IB = 0
Emitter-Base Breakdown Voltage
IE = 100 μA, IC = 0
Collector Cut-Off Current
VCB = 60 V, IE = 0
Emitter Cut-Off Current
VEB = 6 V, IC = 0
DC Current Gain
VCE = 2 V, IC = 100 mA
DC Current Gain
VCE = 2 V, IC = 1 A
Base-Emitter On Voltage(3)
VCE = 2 V, IC = 50 mA
Collector-Emitter Saturation Voltage(3) IC = 1 A, IB = 50 mA
Base-Emitter Saturation Voltage(3)
IC = 1 A, IB = 50 mA
Output Capacitance
VCE = 10 V, IE = 0,
f = 1 MHz
fT Current Gain Bandwidth Product
tON Turn-On Time
tSTG
Storage Time
tF Fall Time
VCE = 2 V, IC = 100 mA
VCC = 10 V, IC = 100 mA,
IB1 = -IB2 = 10 mA,
VBE(off) = -2 V ~ -3 V
Note:
3. Pulse test: pulse width < 350 μs, duty cycle 2% pulsed.
Min.
120
60
6
135
81
600
100
Typ.
640
0.15
0.9
19
160
0.07
0.95
0.07
Max.
100
100
400
Unit
V
V
V
nA
nA
700
0.30
1.2
mV
V
V
pF
MHz
μs
μs
μs
hFE Classification
Classification
hFE1
Y
135 ~ 270
G
200 ~ 400
L
300 ~ 600
© 2002 Fairchild Semiconductor Corporation
KSD1616A Rev. 1.6
2
www.fairchildsemi.com


Part Number KSD1616A
Description NPN Epitaxial Silicon Transistor
Maker Fairchild Semiconductor
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KSD1616A Datasheet PDF






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