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Fairchild Semiconductor Electronic Components Datasheet

KSD1621 Datasheet

NPN Epitaxial Silicon Transistor

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KSD1621
High Current Driver Applications
• Low Collector-Emitter Saturation Voltage
• Large Current Capacity and Wide SOA
• Fast Switching Speed
• Complement to KSB1121
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
PC Collector Power Dissipation
PC*
TJ Junction Temperature
TSTG
Storage Temperature
* Mounted on Ceramic Board (250mm2x0.8mm)
1 SOT-89
1. Base 2. Collector 3. Emitter
Ratings
30
25
6
2
500
1.3
150
-55 ~ 150
Units
V
V
V
A
mW
W
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
DC Current Gain
VCE (sat) Collector-Emitter Saturation Voltage
VBE (sat) Base-Emitter Saturation Voltage
fT Current Gain Bandwidth product
Cob Output Capacitance
tON * Turn On Time
tSTG
* Storage Time
tF * Fall Time
* Pulse Width=20µs, Duty Cycle1%
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VBE=4V, IC=0
VCE=2V, IC=0.1A
VCE=2V, IC=1.5A
IC=1.5A, IB=75mA
IC=1.5A, IB=75mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
VCC=12V, VBE=5V
IB1= -IB2=25mA
IC=0.5A, RL=25
Min.
30
25
6
100
65
Typ.
0.18
0.85
150
19
60
500
25
Max.
100
100
560
Units
V
V
V
nA
nA
0.4 V
1.2 V
MHz
pF
ns
ns
ns
hFE Classification
Classification
hFE
R
100 ~ 200
S
140 ~ 280
Marking
T
200 ~ 400
U
280 ~ 560
©2002 Fairchild Semiconductor Corporation
SYX
hFE grade
Rev. A2, November 2002


Fairchild Semiconductor Electronic Components Datasheet

KSD1621 Datasheet

NPN Epitaxial Silicon Transistor

No Preview Available !

Typical Characteristics
2.0
IB = 50mA IB = 30mA
IB = 20mA
1.6
1.2
0.8
0.4
0.0
0.0
IB = 10mA
IB = 8mA
IB = 6mA
IB = 4mA
IB = 2mA
IB = 0
0.2 0.4 0.6 0.8 1.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
IC = 10 IB
1
0.1
0.01
0.01
0.1 1
IC[A], COLLECTOR CURRENT
10
Figure 3. Collector-Emitter Saturation Voltage
1000
100
IE=0
f = 1MHz
10
1
0.1 1 10
VCB [V], COLLECTOR-BASE VOLTAGE
100
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
1000
100
VCE= 2V
10
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0.0
VCE = 2V
0.2 0.4 0.6 0.8 1.0
VBE[V], BASE-EMITTER VOLTAGE
1.2
Figure 4. Base-Emitter On Voltage
1000
VCE = 10V
100
10
0.1
1
IC[A], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
Rev. A2, November 2002


Part Number KSD1621
Description NPN Epitaxial Silicon Transistor
Maker Fairchild Semiconductor
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