KSD1692
Feature
- -
- - High Dc Durrent Gain Low Collector Saturation Voltage Built-in a Damper Diode at E-C High Power Dissipation : PC = 1.3W (Ta=25°C) TO-126 2.Collector 3.Base
1. Emitter
NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)
- Collector Current (Pulse) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 150 100 8 3 5 1.3 15 150
- 55 ~ 150 Units V V V A A A W W °C
- PW≤10ms, duty Cycle≤50%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) t ON t STG t F Parameter Collector Cut-off Current Emitter Cut-off Current
- DC Current Gain
- Collector-Emitter Saturation Voltage
- Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition VCB = 100V, IE = 0 VEB = 5V, IC =...
