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Fairchild Semiconductor Electronic Components Datasheet

KSD1692 Datasheet

NPN Silicon Darlington Transistor

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KSD1692
Feature
• High Dc Durrent Gain
• Low Collector Saturation Voltage
• Built-in a Damper Diode at E-C
• High Power Dissipation : PC = 1.3W (Ta=25°C)
1 TO-126
1. Emitter 2.Collector 3.Base
NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Sym-
bol
Parameter
Value
Units
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current (DC)
ICP *Collector Current (Pulse)
PC Collector Dissipation (Ta=25°C)
P C Collector Dissipation (TC=25°C)
TJ Junction Temperature
TSTG Storage Temperature
* PW10ms, duty Cycle50%
150
100
8
3
5
1.3
15
150
- 55 ~ 150
V
V
V
A
A
A
W
W
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
*DC Current Gain
VCE(sat) *Collector-Emitter Saturation Voltage
VBE(sat) *Base-Emitter Saturation Voltage
tON Turn ON Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW350µs, duty Cycle2% Pulsed
VCB = 100V, IE = 0
VEB = 5V, IC = 0
VCE = 2V, IC = 1.5A
VCE = 2V, IC = 3A
IC = 1.5A, IB = 1.5mA
IC = 1.5A, IB = 1.5mA
VCC = 40V, IC = 1.5A
IB1 = - IB2 = 1.5mA
RL = 27
Min.
2K
1K
Typ.
0.9
1.5
0.5
2
1
Max.
10
2
20K
Units
µA
mA
1.2 V
2V
µs
µs
µs
hFE Classificntion
Classification
hFE1
O
2000 ~ 5000
Y
4000 ~ 12000
G
6000 ~ 20000
©2000 Fairchild Semiconductor International
Rev. A, February 2000


Fairchild Semiconductor Electronic Components Datasheet

KSD1692 Datasheet

NPN Silicon Darlington Transistor

No Preview Available !

Typical Characteristics
5
IB = 450uA
4 IB = 400uA
IB = 350uA
IB = 300uA
IB = 250uA
3
2
1
IB = 500uA
IB = 200uA
IB = 150uA
IB = 100uA
IB = 50uA
0
012345
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
100
Ic = 1000 IB
Pulsed
10
VBE(sat)
1
VCE(sat)
0.1
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
160
140
120
100
80
60
40
20
sD/bISLSIIMPAITTEIODN LIMITED
0
25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas
©2000 Fairchild Semiconductor International
100000
10000
VCE = 2V
Pulsed
1000
100
0.01
0.1 1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
10
Ic(Pulse)
Ic(DC)
1
Dissipation20L0imm1s0itmeds
0.1
Tc=25oC
Single Pulse
0.01
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
500
Figure 4. Forward Bias Safe Operating Areas
20
15
10
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000


Part Number KSD1692
Description NPN Silicon Darlington Transistor
Maker Fairchild Semiconductor
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KSD1692 Datasheet PDF






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