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Fairchild Semiconductor Electronic Components Datasheet

KSD1944 Datasheet

High Gain Power Transistor

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KSD1944
High Gain Power Transistor
1 TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (TC=25°C)
Junction Temperature
Storage Temperature
Value
80
60
8
3
30
150
- 55 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
h FE
VBE(sat)
VCE(sat)
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
IC = 25mA, IB = 0
VCB = 80V, IE = 0
VEB = 8V, IC = 0
VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
IC = 2A, IB = 0.05A
Min.
60
400
Max.
100
10
2000
1.5
1
Units
V
µA
µA
V
V
©2000 Fairchild Semiconductor International
Rev. A, February 2000


Fairchild Semiconductor Electronic Components Datasheet

KSD1944 Datasheet

High Gain Power Transistor

No Preview Available !

Typical Characteristics
2.0
1.8
1.6 IB = 1.2mA
1.4 IB = 1mA
1.2 IB = 0.8mA
1.0 IB = 0.6mA
0.8
IB = 0.4mA
0.6
0.4 IB = 0.2mA
0.2
0 1 2 3 4 5 6 7 8 9 10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
1 VBE(sat)
Ic = 40 IB
0.1
VCE(sat)
0.01
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
10000
1000
VCE = 4V
100
10
0.01
0.1 1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
10
ICMAX(DC)
1
DC
0.1
1
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
Rev. A, February 2000


Part Number KSD1944
Description High Gain Power Transistor
Maker Fairchild Semiconductor
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KSD1944 Datasheet PDF






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