KSD1944
KSD1944 is High Gain Power Transistor manufactured by Fairchild Semiconductor.
High Gain Power Transistor
TO-220F 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (TC=25°C) Junction Temperature Storage Temperature Value 80 60 8 3 30 150
- 55 ~ 150 Units V V V A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCEO ICBO IEBO h FE VBE(sat) VCE(sat) Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Test Condition IC = 25m A, IB = 0 VCB = 80V, IE = 0 VEB = 8V, IC = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A IC = 2A, IB = 0.05A 400 Min. 60 Max. 100 10 2000 1.5 1 V V Units V µA µA
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
2.0 1.8
VCE = 4V IB = 1.2m A IB = 1m A IB = 0.8m A IB = 0.6m A IB = 0.4m A
Ic[A], COLLECTOR CURRENT
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 h FE, DC CURRENT GAIN
IB = 0.2m A
10 0.01
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current...
