KSE5741
KSE5741 is NPN Silicon Darlington Transistor manufactured by Fairchild Semiconductor.
KSE5740/5741/5742
KSE5740/5741/5742
High Voltage Power Switching In Inductive Circuits
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- - High Voltage Power Darlington TR Small Engine lgnition Switching Regulators Inverters Solenold and Relay Drivers Motor Control
TO-220 2.Collector 3.Emitter
NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol BVCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSE5740 : KSE5741 : KSE5742 Collector-Emitter Voltage : KSE5740 : KSE5741 : KSE5742 Emitter-Base Voltage Collector Current (DC)
- Collector Current (Pulse) Base Current (DC)
- Base Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
1.Base
Value 300 350 400 600 700 800 8 8 16 2.5 5 80 150
- 65 ~ 150
Units V V V V V V V A A A A W °C °C
VCEV
VEBO IC ICP IB IBP PC TJ TSTG
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : KSE5740 : KSE5741 : KSE5742 Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Diode Forward Voltage Delay Time Rise Time Storage Time Fall Time Voltage Storage Time Cross-over Time Test Condition IC = 50m A, IB=0 Min. 300 350 400 1 75 50 200 100 400 2 3 2.5 3.5 2.5 0.04 0.5 8 2 4 2 V V V V V µs µs µs µs µs µs
Rev. A1, June 2001
Typ.
Max.
Units V V V m A m A
ICEV IEBO h FE VCE(sat) VBE(sat) VF t D t R t S t F t SV t C
VCEV=Rate Value, VBE(OFF)=1.5V VEB = 8V, IC= 0 VCE =5V, IC = 0.5A VCE =5V, IC = 4A IC =4A, IB = 0.2A IC =8A, IB= 0.4A IC =4A, IB = 0.2A IC =8A, IB = 0.4A IF =5A VCC = 250V, IC(pk) = 6A IB1 = IB2 = 0.25A t P = 25µs Duty Cycle≤1% IC(pk) = 6A, VCE(pk) = 250V IB1= 0.06A, VBE (off) = 5V
- PW=5ms, Duty Cycle=10%
©2001 Fairchild Semiconductor Corporation
KSE5740/5741/5742
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
V CE = 5V
IC = 20 IB h FE, DC CURRENT GAIN
V BE(sat)
V...