KSR1010
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=10KΩ)
• Complement to KSR2010
1 TO-92
1. Emitter 2. Collector 3. Base
Equivalent Circuit
C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
ICBO
hFE
VCE (sat)
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
IC=100µA, IE=0
IE=1mA, IB=0
VCB=30V, IE=0
VCE=5V, IC=1mA
IC=10mA, IB=1mA
VCB=10V, IE=0
f=1MHz
fT
Current Gain Bandwidth Product
VCE=10V, IC=5mA
R Input Resistor
R
B
Value
40
40
5
100
300
150
-55 ~ 150
E
Units
V
V
V
mA
mW
°C
°C
Min.
40
40
100
7
Typ.
3.7
250
10
Max.
0.1
600
0.3
Units
V
V
µA
V
pF
MHz
13 KΩ
©2002 Fairchild Semiconductor Corporation
Rev. A2, October 2002
