Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
MB1S MB2S MB4S MB6S MB8S
VRRM
VRMS
VR
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage (Rated VR)
Average Rectified Forward Current at TA = 50°C
Non-Repetitive Peak Forward Surge Current:
8.3 ms Single Half-Sine-Wave
100 200 400 600 800
70 140 280 420 560
100 200 400 600 800
0.5
35
V
V
V
A
A
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to +150
-55 to +150
°C
°C
Thermal Characteristics
Symbol
Parameter
PD
RθJA
RθJL
Power Dissipation
Thermal Resistance, Junction to Ambient, per Leg(1)
Thermal Resistance, Junction to Lead, per Leg(1)
Note:
1. Device mounted on PCB with 0.5 x 0.5 inch (13 x 13 mm) lead length.
Value
1.4
85
20
Unit
W
°C/W
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise specified.
Symbol
VF
IR
I2t
CT
Parameter
Conditions
Forward Voltage, per Bridge
IF = 0.5 A
Reverse Current, per Leg at Rated VR
TA = 25°C
TA = 125°C
I2t Rating for Fusing
t < 8.3 ms
Total Capacitance, per Leg
VR = 4.0 V,
f = 1.0 MHz
Value
1.0
5.0
0.5
5.0
13
Unit
V
μA
mA
A2s
pF
© 2007 Fairchild Semiconductor Corporation
MB1S - MB8S Rev. 1.2.3
2
www.fairchildsemi.com
