MBR1645 Datasheet | Fairchild Semiconductor

Features - - - - - - Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. .113(2.87) .103(2.62) .594(15.1) .587(14.91) .27(6.86) .23(5.84) .412(10.5) MAX DIA .154(3.91) .148(3.74) .185(4.70) .175(4.44) .055(1.40) .045(1.14) .16(4.06) .14(3.56) Dimensions are in: inches (mm) .56(14.22) .53(13.46) .11(2.79) .10(2.54) TO-220AC .037(0.94) .027(0.68) .205(5.20) .195(4.95) PIN 1 + + PIN 2 CASE Positive CASE .025(0.64) .014(0.35) 16 Ampere Schottky Barrier Rectifiers Absolute Maximum Ratings- Symbol IO if(repetitive) if(surge) PD RθJA RθJL Tstg TJ TA = 25°C unless otherwise noted Parameter Average Rectified Current .375” lead length @ TA = 125°C Peak Repetitive Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 125°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Storage Temperature Range Operating Junction Temperature Value Units 32 150 2.0 16.6 60 1.5 -65 to +175 -65 to +150 A A W m W/°C °C/W °C/W °C °C - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics Parameter TA = 25°C unless otherwise noted Device 1635 1645 45 31 45 10,000 0.2 40 0.63 0.57 1.0 1.0 50 0.75 0.65 0.5 1650 50 35 50 1660 60 42 60 35 24...