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MPF102 - N-Channel RF Amplifier

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    MPF102 MPF102 N-Channel RF Amplifier • This device is designed for electronic switching applications such as low ON resistance analog switching. • Sourced from process 50. 1 TO-92 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * Ta=25°C unless otherwise noted Symbol Parameter VDG Drain-Gate Voltage VGS Gate-Source Voltage IGF Forward Gate Current TJ, TSTG Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired Value 25 -25 10 - 55 ~ +155 NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits.
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