MPS651
Switching and Amplifier Applications
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Ratings 80 60 5 0.8 625 150 -55 ~ 150 Units V V V A m W °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 h FE3 h FE4 VCE (sat) VBE (sat) VBE (on) f T Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC=100µA, IE=0 IC=10m A, IB=0 IC=10µA, IC=0 VCB=80V, IE=0 VEB=4.0V, IC=0 VCE=2V, IC=50m A VCE=2V, IC=500m A VCE=2V, IC=1.0A VCE=2V, IC=2.0A IC=1.0A, IB=100m A IC=2.0A, IB=200m A IC=1.0A, IB=100m A VCE=2.0V, IC=1.0A VCE=5.0V, IC=50m A, f=100MHz 75 75 75 75...
