MPS6531 Datasheet | Fairchild Semiconductor

Discrete POWER & Signal Technologies TO-92 NPN General Purpose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents to 500 m A. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings- Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 60 5.0 1.0 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max MPS6531 625 5.0 83.3 200 Units m W m W/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage- Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current I C = 10 m A, I B = 0 I C = 10 µ A, I E = 0 I E = 10 µ A, IC = 0 VCB = 40 V, IE = 0 VCB = 40 V, IE = 0, TA = 60 ° C 40 60 5.0 50 2.0 V V V n A µA ON CHARACTERISTICS- h FE DC Current Gain VCE = 1.0 V, IC = 10 m A VCE = 1.0 V, IC = 100 m A VCE = 10 V, IC = 500 m A I C = 100 m A, IB = 10 m A I C = 100 m A, IB = 10 m A 60 90 50 270 0.3 1.0 V V VCE(sat ) VBE(...