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Fairchild Semiconductor Electronic Components Datasheet

MPSA05 Datasheet

NPN General Purpose Amplifier

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MPSA05 pdf
MPSA05 / MMBTA05
NPN General-Purpose Amplifier
Description
This device is designed for general-purpose amplifier
applications at collector currents to 300 mA. Sourced
from process 10.
September 2015
123
Straight Lead
Bulk Packing
12 3
TO-92
1. Emitter
2. Base
3. Collector
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
MPSA05RA
MMBTA05
Marking
MPSA05
1H
3
2
1
SOT-23
Mark: 1H
1. Base 2. Emitter 3. Collector
Package
TO-92 3L
SOT-23 3L
Packing Method
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
TJ , TSTG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Junction and Storage Temperature
Value
60
60
4.0
500
-55 to +150
Unit
V
V
V
mA
°C
© 2002 Fairchild Semiconductor Corporation
MPSA05 / MMBTA05 Rev. 1.3
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

MPSA05 Datasheet

NPN General Purpose Amplifier

No Preview Available !

MPSA05 pdf
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
PD
RθJC
RθJA
Total Device Dissipation
Derate Above 25°C
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Note:
1. Device mounted on FR-4 PCB 1.6” × 0.06"
MPSA05
625
5.0
83.3
200
Max.
MMBTA05(1)
350
2.8
357
Unit
mW
mW/°C
°C/W
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
V(BR)CEO
V(BR)EBO
ICEO
ICBO
Parameter
Collector-Emitter Breakdown
Voltage(2)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation
Voltage
Base-Emitter On Voltage
fT Current Gain - Bandwidth Product
Conditions
IC = 1 mA, IB = 0
IE = 100 μA, IC = 0
VCE = 60 V, IB = 0
VCB = 60 V, IE = 0
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 100 mA, IB = 10 mA
IC = 100 mA, VCE = 1.0 V
IC = 10 mA, VCE = 2 V,
f = 100 MHz
Note:
2. Pulse test: pulse width 300 μs, duty cycle 2.0%.
Min.
60
4
100
100
100
Max.
0.1
0.1
Unit
V
V
μA
μA
0.25
1.2
V
V
MHz
© 2002 Fairchild Semiconductor Corporation
MPSA05 / MMBTA05 Rev. 1.3
2
www.fairchildsemi.com


Part Number MPSA05
Description NPN General Purpose Amplifier
Maker Fairchild Semiconductor
Total Page 5 Pages
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