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Fairchild Semiconductor Electronic Components Datasheet

MPSA06 Datasheet

NPN General Purpose Amplifier

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September 2014
MPSA06 / MMBTA06 / PZTA06
NPN General-Purpose Amplifier
Features
• This device is designed for general-purpose amplifier
applications at collector currents to 300 mA.
• Sourced from process 12.
MPSA06
MMBTA06
C
PZTA06
C
EBC
TO-92
Ordering Information
Part Number
MPSA06
MMBTA06
PZTA06
Top Mark
MPSA06
1G
A06
E
B SOT-23
Mark: 1G
Package
TO-92 3L
SOT-23 3L
SOT-223 4L
E
C
B
SOT-223
Packing Method
Bulk
Tape and Reel
Tape and Reel
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
80
80
4.0
500
-55 to +150
V
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

MPSA06 Datasheet

NPN General Purpose Amplifier

No Preview Available !

Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max.
MPSA06 MMBTA06(3) PZTA06(4)
Unit
Total Device Dissipation
PD Derate Above 25°C
625
350
1000
mW
5.0 2.8 8.0 mW/°C
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
83.3
°C/W
200 357 125 °C/W
Notes:
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = 1.0 mA, IB = 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE = 100 μA, IC = 0
ICEO Collector Cut-Off Current
VCE = 60 V, IB = 0
ICBO Collector Cut-Off Current
VCB = 80 V, IE = 0
On Characteristics
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
Small Signal Characteristics
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 100 mA, IB = 10 mA
IC = 100 mA, VCE = 1.0 V
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 2.0 V,
f = 100 MHz
Notes:
5. Pulse test: pulse width 300 μs, duty cycle 2%.
Min. Max. Unit
80 V
4.0 V
0.1 μA
0.1 μA
100
100
0.25
V
1.2 V
100 MHz
© 1997 Fairchild Semiconductor Corporation
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0
2
www.fairchildsemi.com


Part Number MPSA06
Description NPN General Purpose Amplifier
Maker Fairchild Semiconductor
Total Page 9 Pages
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