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Fairchild Semiconductor Electronic Components Datasheet

MPSA29 Datasheet

NPN Darlington Transistor

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MPSA29
Discrete POWER & Signal
Technologies
C
BE
TO-92
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 500 mA. Sourced
from Process 03. See MPSA28 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
Collector-Emitter Voltage
100
VCBO
Collector-Base Voltage
100
VEBO
Emitter-Base Voltage
12
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
800
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
MPSA29
625
5.0
83.3
200
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation


Fairchild Semiconductor Electronic Components Datasheet

MPSA29 Datasheet

NPN Darlington Transistor

No Preview Available !

NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CES
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO Collector Cutoff Current
ICES Collector Cutoff Current
IEBO Emitter Cutoff Current
IC = 100 µA, IB = 0
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 80 V, IE = 0
VCE = 80 V, IE = 0
VEB = 10 V, IC = 0
100
100
12
100
500
100
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
VCE = 5.0 V, IC = 10 mA
VCE = 5.0 V, IC = 100 mA
IC = 10 mA, IB = 0.01 mA
IC = 100 mA, IB = 0.1 mA
IC = 100 mA, VCE = 5.0 V
10,000
10,000
1.2
1.5
2.0
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
Cobo
Output Capacitance
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
VCB = 10 V, IE = 0, f = 1.0 MHz
125
8.0
V
V
V
nA
nA
nA
V
V
V
MHz
pF


Part Number MPSA29
Description NPN Darlington Transistor
Maker Fairchild Semiconductor
Total Page 2 Pages
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