Discrete POWER & Signal
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 500 mA. Sourced
from Process 03. See MPSA28 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Collector Current - Continuous
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
© 1997 Fairchild Semiconductor Corporation