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MPSA65 - PNP Darlington Transistor

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MPSA65 / MMBTA65 / PZTA65 Discrete POWER & Signal Technologies MPSA65 MMBTA65 PZTA65 C BE TO-92 C SOT-23 Mark: 2W E B C SOT-223 C B E PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value VCES Collector-Emitter Voltage 30 VCBO VEBO IC Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous 30 10 1.2 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
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