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Fairchild Semiconductor Electronic Components Datasheet

MPSA92 Datasheet

PNP High Voltage Amplifier

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MPSA92
MMBTA92
PZTA92
C
BE
TO-92
C
SOT-23
Mark: 2D
E
B
C
SOT-223
E
C
B
PNP High Voltage Amplifier
This device is designed for high voltage driver applications.
Sourced from Process 76.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
Collector-Emitter Voltage
Collector-Base Voltage
DataSheet4U.com
300
300
VEBO
Emitter-Base Voltage
5.0
IC Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
MPSA92
*MMBTA92
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
625 350
5.0 2.8
83.3
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
200
357
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**PZTA92
1,000
8.0
125
Units
mW
mW /°C
°C/W
°C/W
DataShee
DataSheet4U.com2000 Fairchild Semiconductor International
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MPSA92/MMBTA92/PZTA92 Rev A
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Fairchild Semiconductor Electronic Components Datasheet

MPSA92 Datasheet

PNP High Voltage Amplifier

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MPSA92 pdf
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Electrical Characteristics
Symbol
Parameter
PNP High Voltage Amplifier
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO Collector-Cutoff Current
IEBO Emitter-Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCB = 200 V, IE = 0
VEB = 3.0 V, IC = 0
300
300
5.0
0.25
0.1
V
V
V
µA
µA
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
IC = 20 mA, IB = 2.0 mA
IC = 20 mA, IB = 2.0 mA
25
40
25
0.5
0.9
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
Ccb Collector-Base Capacitance
VCB = 20 V, IE = 0, f = 1.0 MHz
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
DataSheet4U.com
50
MHz
6.0 pF
Spice Model
PNP (Is=218.9f Xti=3 Eg=1.11 Vaf=100 Bf=99 Ne=1.307 Ise=218.9f Ikf=.2016 Xtb=1.5 Br=24.67 Nc=2 Isc=0
Ikr=0 Rc=7 Cjc=19.88p Mjc=.4876 Vjc=.75 Fc=.5 Cje=81.49p Mje=.3493 Vje=.75 Tr=516.9p Tf=1.395n Itf=1.5
Vtf=22 Xtf=270 Rb=10)
Typical Characteristics
DC Current Gain
vs Collector Current
140
120 125 ºC
100
80 25 °C
60
- 40 ºC
40
20 VCE = 5V
0
0.1 1
10
I C - COLLECTOR CURRENT (mA)
100
Collector-Emitter Saturation
Voltage vs Collector Current
β = 10
0.6
0.4
0.2
0.1
25 °C
125 ºC
- 40 ºC
1 10
I C - COLLECTOR CURRENT (mA)
100
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DataShee


Part Number MPSA92
Description PNP High Voltage Amplifier
Maker Fairchild Semiconductor
Total Page 14 Pages
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