P2010DN
Key Features
- Low forward voltage drop
- High frequency properties and switching speed
- Guard ring for over-voltage protection
- Part: P2010DN
- Description: FYP2010DN
- Manufacturer: Fairchild Semiconductor
- Size: 63.70 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| PRFS-P2010-005 | ANADIGICS | 2.42.5 GHz Power Amplifier |
| PRFS-P2010-007 | ANADIGICS | 2.42.5 GHz Power Amplifier |
| PRFS-P2010-EVL | ANADIGICS | 2.42.5 GHz Power Amplifier |
| P2010A | onsemi | Low Frequency EMI Reduction IC |
| PRFS-P2010-006 | ANADIGICS | 2.42.5 GHz Power Amplifier |
| PRFS-P2010-008 | ANADIGICS | 2.42.5 GHz Power Amplifier |
| P201B | Hamamatsu Corporation | CdS photoconductive cell |
| P20150E | PFC Device Corporation | MOS Schottky Rectifier |
| P20150D | PFC Device Corporation | MOS Schottky Rectifier |
| P201D | Hamamatsu Corporation | CdS photoconductive cell |