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P6N80 - FQP6N80

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 5.8A, 800V, RDS(on) = 1.95Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS 3 5 " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current -.

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More Datasheets from Fairchild (now onsemi)

Part Number Description
P6N60 FQP6N60
P6N70 FQP6N70
P6N70A SSP6N70A

Full PDF Text Transcription for P6N80 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for P6N80. For precise diagrams, tables, and layout, please refer to the original PDF.

FQP6N80 September 2000 QFET FQP6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild...

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ement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. TM Features • • • • • • 5.8A, 800V, RDS(on) = 1.