P6N80 - FQP6N80

Fairchild Semiconductor

Datasheet Details

Part number	P6N80
Manufacturer	Fairchild Semiconductor
File Size	672.78 KB
Description	FQP6N80
Datasheet	P6N80-FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

5.8A, 800V, RDS(on) = 1.95Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS 3 5 " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current -.

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Published: Jul 9, 2014 |