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PCGA200T65NF8 - IGBT

Key Features

  • AEC-Q101 Qualified.
  • Max Junction Temperature 175°C.
  • Positive Temperature Co-efficient.
  • Ease of Paralleling.
  • Short Circuit Rated.
  • Very Low Saturation Voltage: VCE(SAT) = 1.53V (Typ. ) @ IC = 200A.
  • Optimized for Motor Control.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
PCGA160T65NF8 IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PCGA200T65NF8 650V, 200A Field Stop Trench IGBT PCGA200T65NF8 650 V, 200 A Field Stop Trench IGBT Features „ AEC-Q101 Qualified „ Max Junction Temperature 175°C „ Positive Temperature Co-efficient „ Ease of Paralleling „ Short Circuit Rated „ Very Low Saturation Voltage: VCE(SAT) = 1.53V (Typ.) @ IC = 200A „ Optimized for Motor Control Applications Applications „ Automotive Traction Modules „ General Power Modules May 2016 Ordering Information P/N Packing Die Size Emitter Attach Area Gate pad Attach Area Die thickness Top Metal Back Metal Topside Passivation Wafer diameter Max Possible Die Per Wafer PCGA200T65NF8 Wafer (Sawn-On-Foil) mils μm 394 X 394 10,000 X 10,000 2 x (169 x 340) 2 x (4,300 x 8,640) 55 x 55 1,400 x 1,400 3 78 Al (0.5% Cu, 0.