QEB421 Datasheet | Fairchild Semiconductor

FEATURES 0.043 (1.1) 0.020 (0.5) SCHEMATIC - Wavelength = 880 nm, Al Ga As - Wide Emission Angle, 120° ANODE CATHODE ANODE 0.024 (0.6) 0.016 (0.4) 0.007 (.18) 0.005 (.12) - Surface Mount PLCC-2 Package - High Power NOTES: 1. Dimensions are in inches (mm) 2. Tolerance of ± .010 (.25) on all non nominal dimensions unless otherwise specified. ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature Reverse Voltage Peak Forward Current(4) Power Dissipation(1) (Flow)(2,3) Continuous Forward Current (TA = 25°C unless otherwise specified) Symbol Topr Tstg Tsol IF VR IFM PD Rating -55 to +100 -55 to +100 260 for 10 sec 100 5 1.75 180 Unit °C °C °C m A V A m W NOTES 1. Derate power dissipation linearly 2.4 m W/°C above 25°C. 2. RMA flux is remended. 3. Methanol or isopropyl alcohols are remended as cleaning agents. 4. Pulse conditions; tp = 100 µs, T = 10 ms. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25°C) MIN. TYP. MAX. UNITS SYMBOL Peak Emission Wavelength Spectral Bandwidth Emission Angle Forward Voltage Reverse Current Radiant Intensity Radiant Flux Temp. Coeff. of IE Temp. Coeff. of VF Temp. Coeff. of D Rise Time Fall Time IF = 100 m A IF = 100 m A IF = 100 m A IF = 100 m A, tp = 20 ms IF = 1 A, tp = 100 µs VR = 5 V IF = 100 m A, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 m A, tp = 20 ms IF = 100 m A IF = 100 m A IF = 100 m A IF = 100 m A DP D 0 VF IR Ie >e TCI TCV TCD tr tf - - - - - - 4 - - - - - - - 880 80 120 1.5 3.0 - - 48 10 -0.5 -4 0.25 - - - - - 1.8 3.8 1 8 - - - - - 1 1 nm nm Deg. V µA m W/sr m W %/K m V/K...