QEC123 Datasheet | Fairchild Semiconductor

DESCRIPTION The QEC12X is an 880 nm Al Ga As LED encapsulated in a clear purple tinted, plastic T-1 package. FEATURES - D= 880 nm - Chip material = Al Ga As - Package type: T-1 (3mm lens diameter) - Matched Photosensor: QSC112/113/114 - Narrow Emission Angle, 16° - High Output Power - Package material and color: Clear, purple tinted, plastic  2001 Fairchild Semiconductor Corporation DS300335 5/18/01 1 OF 4 .fairchildsemi. PLASTIC INFRARED LIGHT EMITTING DIODE QEC121 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1) QEC122 (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 50 5 100 Unit °C °C °C °C m A V m W NOTES 1. Derate power dissipation linearly 1.33 m W/°C above 25°C. 2. RMA flux is remended. 3. Methanol or isopropyl alcohols are remended as cleaning agents. 4. Soldering iron 1/16” (1.6mm) minimum from housing. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA = 25°C) SYMBOL MIN TYP MAX UNITS Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity QEC121 Radiant Intensity QEC122 Radiant Intensity QEC123 Rise Time Fall Time IF = 100 m A IF = 100 m A IF = 100 m A, tp = 20 ms VR = 5 V IF = 100 m A, tp = 20 ms IF = 100 m A, tp = 20 ms IF = 100 m A, tp = 20 ms IF = 100 m A DPE 201/2 VF IR IE IE IE tr tf - - - - 14 27 39 - - 880 16 - - - - - 800 800 - - 1.7 10 - 94 - - - nm Deg. V µA m W/sr m W/sr m W/sr ns ns .fairchildsemi....