QED423 Datasheet | Fairchild Semiconductor

DESCRIPTION The QED422/423 is an 880 nm Al Ga As LED encapsulated in a clear, purple tinted, plastic TO-46 package. FEATURES - - - - - - - λ= 880 nm Chip material = Al Ga As Package type: Plastic TO-46 Matched Photosensor: QSD722/723/724 Medium Wide Emission Angle, 30° High Output Power Package material and color: clear, purple tinted, plastic © 2002 Fairchild Semiconductor Corporation Page 1 of 4 6/13/02 PLASTIC INFRARED LIGHT EMITTING DIODE QED422 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD Rating -40 to + 100 -40 to + 100 240 for 5 sec 260 for 10 sec 100 5 200 Unit °C °C °C °C m A V m W Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1) NOTES: 1. Derate power dissipation linearly 2.67 m W/°C above 25°C. 2. RMA flux is remended. 3. Methanol or isopropyl alcohols are remended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing . ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) Parameter Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity QEC522 Radiant Intensity QEC523 Rise Time Fall Time Test Conditions IF = 100 m A IF = 100 m A IF = 100 m A, tp = 20 ms VR = 5 V IF = 100 m A, tp = 20 ms IF = 100 m A, tp = 20 ms IF = 100 m A Symbol λPE 2Θ1/2 VF IR IE IE tr tf Min - - - - 10 20 - - Typ 880 30 - - - - 800 800 Max - - 1.8 10 40 - - - Units nm Deg. V µA m W/sr m W/sr ns ns © 2002 Fairchild Semiconductor Corporation Page 2 of 4 6/13/02 PLASTIC INFRARED LIGHT EMITTING DIODE QED422 Fig. 1 Normalized Radiant Intensity vs. Forward Current Ie - NORMALIZED RADIANT INTENSITY 10 Normalized to: IF = 100 m A Pulsed tpw = 100 µs Duty Cycle = 0.1 % TA = 25°C 2.0 IF = 50 m A Fig. 2 Forward Voltage vs. Ambient Temperature - FORWARD VOLTAGE (V) IF = 100 m A...