QEE113 Datasheet | Fairchild Semiconductor

DESCRIPTION The QEE113 is a 940 nm Ga As LED encapsulated in a medium wide angle, plastic sidelooker package. FEATURES - - - - - - - - λ= 940 nm Package Type = Sidelooker Chip Material = Ga As Matched Photosensor: QSE113 Medium Wide Emission Angle, 50° Package Material: Clear Epoxy High Output Power Gray stripe on the top side © 2002 Fairchild Semiconductor Corporation Page 1 of 4 4/30/02 PLASTIC INFRARED LIGHT EMITTING DIODE ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 50 5 100 Unit °C °C °C °C m A V m W Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1) NOTES: 1. Derate power dissipation linearly 1.33 m W/°C above 25°C. 2. RMA flux is remended. 3. Methanol or isopropyl alcohols are remended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) Parameter Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity Rise Time Fall Time Test Conditions IF = 100 m A IF = 100 m A IF = 100 m A, tp = 20 ms VR = 5 V IF = 100 m A, tp = 20 ms IF = 100 m A Symbol λPE 2Θ1/2 VF IR IE tr tf Min - - - - 3 - - Typ 940 50 - - - 1000 1000 Max - - 1.5 10 12 - - Units nm Deg. V µA m W/sr ns ns © 2002 Fairchild Semiconductor Corporation Page 2 of 4 4/30/02 PLASTIC INFRARED LIGHT EMITTING DIODE Fig.1 Normalized Radiant Intensity vs. Forward Current Ie - NORMALIZED RADIANT INTENSITY 10 Normalized to: IF = 100 m A Pulsed tpw = 100 µs Duty Cycle = 0.1 % TA = 25˚C Fig.2 Coupling Characteristics of QEE113 And QSE113 IC (ON) - NORMALIZED COLLECTOR CURRENT (m A) 1.0 Normalized to: d=0 IF Pulsed tpw = 100 µs Duty Cycle = 0.1 % VCC = 5 V RL = 100 Ω TA =...