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RF1S630SM Key Features

  • 9A, 200V
  • rDS(ON) = 0.400Ω
  • Single Pulse Avalanche Energy Rated
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Related Literature
  • TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”

Other RF1S630SM Datasheets

Manufacturer Part Number Description
Intersil Corporation Logo Intersil RF1S630SM 9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs

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RF1S630SM Description

Data Sheet IRF630, RF1S630SM January 2002 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching...