RF1S9530SM - P-Channel Power MOSFETs

Fairchild Semiconductor

Datasheet Details

Part number	RF1S9530SM
Manufacturer	Fairchild Semiconductor
File Size	109.61 KB
Description	P-Channel Power MOSFETs
Datasheet	RF1S9530SM-FairchildSemiconductor.pdf

12A, 100V.
rDS(ON) = 0.300Ω.
Single Pulse Avalanche Energy Rated.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-263A GATE SOURCE DRAIN (FLANGE) ©2002 Fairchild Semiconduc.

📁 RF1S9530SM Similar Datasheet

RF1S9540 - P-Channel MOSFET (Harris)
RF1S9540SM - P-Channel Power MOSFET (Intersil Corporation)
RF1S9630SM - 6.5A/ 200V/ 0.800 Ohm/ P-Channel Power MOSFETs (Intersil Corporation)
RF1S9640SM - 11A/ 200V/ 0.500 Ohm/ P-Channel Power MOSFETs (Intersil Corporation)
RF1S30P05 - P-Channel Enhancement-Mode Power MOSFET (Harris)
RF1S30P05SM - 30A/ 50V/ 0.065 Ohm/ P-Channel Power MOSFETs (Intersil Corporation)
RF1S30P06 - 30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs (Intersil Corporation)
RF1S30P06SM - P-Channel Power MOSFET (Intersil Corporation)

Other Datasheets by Fairchild Semiconductor

RF1S22N10SM - 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs
RF1S25N06 - 25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs
RF1S25N06SM - 25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs
RF1S30N06LE - 30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs
RF1S30N06LESM - 30A 60V ESD Rated/ Avalanche Rated / Logic Level N-Channel Enhancement-Mode Power MOSFETs
RF1S40N10 - 40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs

Published: Sep 20, 2015 |