Download RF1S9530SM Datasheet PDF
RF1S9530SM datasheet preview
RF1S9530SM page 2
Page 2
RF1S9530SM page 3
Page 3

RF1S9530SM Key Features

  • 12A, 100V
  • rDS(ON) = 0.300Ω
  • Single Pulse Avalanche Energy Rated
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance
  • Related Literature
  • TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”

Other RF1S9530SM Datasheets

Manufacturer Part Number Description
Intersil Corporation Logo Intersil RF1S9530SM 12A/ 100V/ 0.300 Ohm/ P-Channel Power MOSFETs

View all RF1S9530SM datasheets →

RF1S9530SM Description

Data Sheet IRF9530, RF1S9530SM January 2002 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching...