Discrete POWER & Signal
Technologies
RGP10A - RGP10M
Features
• 1.0 ampere operation at TA = 55°C
with no thermal runaway.
• High temperature metallurgically
bonded construction.
• Glass passivated cavity-free junction.
• Typical IR less than 1µA.
• Fast switching for high efficiency.
DO-41
COLOR BAND DENOTES CATHODE
1.0 min (25.4)
Dimensions in
inches (mm)
0.205 (5.21)
0.160 (4.06)
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
1.0 Ampere Glass Passivated Fast Recovery Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
IO
if(surge)
PD
RθJA
Tstg
TJ
Parameter
Average Rectified Current
.375 " lead length @ TL = 55°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Storage Temperature Range
Operating Junction Temperature
Value
1.0
30
2.5
17
50
-65 to +175
-65 to +175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
A
A
W
mW/°C
°C/W
°C
°C
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 150°C
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Maximum Forward Voltage @ 1.0 A
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
Device
10A 10B 10D 10G
50 100 200 400
35 70 140 280
50 100 200 400
5.0
200
150
1.3
15
10J
600
420
600
250
Units
10K 10M
800 1000
560 700
800 1000
V
V
V
µA
µA
500 nS
V
pF
©1999 Fairchild Semiconductor Corporation
RPG10A - RPG10M, Rev. A
