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Fairchild Semiconductor Electronic Components Datasheet

RLD03N06CLESM Datasheet

0.3A/ 60V/ ESD Rated/ Current Limited/ Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs

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RLD03N06CLESM pdf
RLD03N06CLE,
S E M I C O N D U C T O R RLD03N06CLESM, RLP03N06CLE
July 1996
0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped
Logic Level N-Channel Enhancement-Mode Power MOSFETs
Features
• 0.30A, 60V
• rDS(ON) = 6.0
• Built in Current Limit ILIMIT 0.140 to 0.210A at 150oC
• Built in Voltage Clamp
Temperature Compensating PSPICE Model
• 2kV ESD Protected
• Controlled Switching Limits EMI and RFI
Packages
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
Description
The RLD03N06CLE, RLD03N06CLESM and RLP03N06CLE
are intelligent monolithic power circuits which incorporate a lat-
eral bipolar transistor, resistors, zener diodes and a power MOS
transistor. The current limiting of these devices allow it to be used
safely in circuits where a shorted load condition may be encoun-
tered. The drain-source voltage clamping offers precision control
of the circuit voltage when switching inductive loads. The “Logic
Level” gate allows this device to be fully biased on with only 5.0V
from gate to source, thereby facilitating true on-off power control
directly from logic level (5V) integrated circuits.
DRAIN
(FLANGE)
JEDEC TO-251AA
SOURCE
DRAIN
GATE
JEDEC TO-252AA
GATE
SOURCE
DRAIN
(FLANGE)
The RLD03N06CLE, RLD03N06CLESM and RLP03N06CLE
incorporate ESD protection and are designed to withstand 2kV
(Human Body Model) of ESD.
PACKAGING AVAILABILITY
Symbol
D
PART NUMBER
PACKAGE
BRAND
RLD03N06CLE
TO-251AA
03N06C
RLD03N06CLESM TO-252AA
03N06C
RLP03N06CLE
TO-220AB
03N06CLE
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.
RLD03N06CLESM9A.
Formerly developmental type TA49026.
G
S
Absolute Maximum Ratings TC = +25oC
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate Source Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Reverse Voltage Gate Bias Not Allowed
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . . . ESD
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
RLD03N06CLE,
RLD03N06CLESM,
RLP03N06CLE
60
60
+5.5
Self Limited
30
0.2
2
-55 to +175
UNITS
V
V
V
W
W/oC
KV
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1996
1
File Number 3948.3


Fairchild Semiconductor Electronic Components Datasheet

RLD03N06CLESM Datasheet

0.3A/ 60V/ ESD Rated/ Current Limited/ Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs

No Preview Available !

RLD03N06CLESM pdf
Specifications RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On Resistance
Limiting Current
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS ID = 250µA, VGS = 0V
VGS(TH)
IDSS
IGSS
rDS(ON)
IDS(LIMIT)
VGS = VDS, ID = 250µA
VDS = 45V,
VGS = 0V
TJ = +25oC
TJ = +150oC
VGS = 5V
TJ = +25oC
TJ = +150oC
ID = 0.100A,
VGS = 5V
TJ = +25oC
TJ = +150oC
VDS = 15V,
VGS = 5V
TJ = +25oC
TJ = +150oC
tON
tD(ON)
VDD = 30V, ID = 0.10A,
RL = 300Ω, VGS = 5V,
RGS = 25
tR
tD(OFF)
tF
tOFF
CISS
COSS
VDS = 25V, VGS = 0V,
f = 1MHz
CRSS
RθJC
RθJA
TO-220 Package
TO-251 and TO-252 Packages
MIN TYP MAX UNITS
60 - 85 V
1 - 2.5 V
- - 50 µA
- - 200 µA
- - 5 µA
- - 20 µA
- - 6.0
- - 12.0
280 - 420 mA
140 - 210 mA
- - 7.5 µs
- - 2.5 µs
- - 5.0 µs
- - 7.5 µs
- - 5.0 µs
- - 12.5 µs
- 100 -
pF
- 65 - pF
- 3.0 - pF
- - 5.0 oC/W
- - 80 oC/W
- - 100 oC/W
Source-Drain Diode Ratings and Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Recovery Time
VSD ISD = 0.1A
tRR ISD = 0.1A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
- - 1.5 V
- - 1.0 ms
2


Part Number RLD03N06CLESM
Description 0.3A/ 60V/ ESD Rated/ Current Limited/ Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
Maker Fairchild Semiconductor
Total Page 13 Pages
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