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Fairchild Semiconductor Electronic Components Datasheet

RMPA1963 Datasheet

CDMA2000-1X and WCDMA Power Amplifier Module

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PRELIMINARY
May 2005
RMPA1963 i-Lo™
US-PCS CDMA, CDMA2000-1X and WCDMA
Power Amplifier Module
Features
38% CDMA/WCDMA efficiency at +28 dBm Pout
14% CDMA/WCDMA efficiency (85 mA total current) at
+16 dBm Pout
Meets HSDPA performance requirements
Linear operation in low-power mode up to +19 dBm
Low quiescent current (Iccq): 25 mA in low-power mode
Single positive-supply operation with low power and shut-
down modes
• 3.4V typical Vcc operation
• Low Vref (2.85V) compatible with advanced handset
chipsets
Compact Lead-free compliant LCC package –
(4.0 X 4.0 x 1.5 mm nominal)
Industry standard pinout
Internally matched to 50 Ohms and DC blocked RF
input/output
Meets IS-95/CDMA2000-1XRTT/WCDMA performance
requirements
General Description
The RMPA1963 Power Amplifier Module (PAM) is Fairchild’s lat-
est innovation in 50 Ohm matched, surface mount modules tar-
geting US-PCS CDMA/WCDMA/HSDPA and Wireless Local
Loop (WLL) applications. Answering the call for ultra-low DC
power consumption and extended battery life in portable elec-
tronics, the RMPA1963 uses novel proprietary circuitry to dra-
matically reduce amplifier current at low to medium RF output
power levels (< +16 dBm), where the handset most often oper-
ates. A simple two-state Vmode control is all that is needed to
reduce operating current by more than 50% at 16 dBm output
power, and quiescent current (Iccq) by as much as 70% com-
pared to traditional power-saving methods. No additional cir-
cuitry, such as DC-to-DC converters, are required to achieve
this remarkable improvement in amplifier efficiency. Further, the
4x4x1.5 mm LCC package is pin-compatible and a drop-in
replacement for last generation 4x4 mm PAMs widely used
today, minimizing the design time to apply this performance-
enhancing technology. The multi-stage GaAs Microwave Mono-
lithic Integrated Circuit (MMIC) is manufactured using Fairchild
RF’s InGaP Heterojunction Bipolar Transistor (HBT) process.
Device
i-L
o
Functional Block Diagram
(Top View)
Vcc1 1
RF IN 2
GND 3
Vmode 4
Vref 5
MMIC
INPUT
MATCH
BIAS/MODE SWITCH
10 Vcc2
OUTPUT
MATCH
9 GND
8 RF OUT
7 GND
6 GND
11 (paddle ground on package bottom)
©2005 Fairchild Semiconductor Corporation
RMPA1963 i-Lo™ Rev. H
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

RMPA1963 Datasheet

CDMA2000-1X and WCDMA Power Amplifier Module

No Preview Available !

Absolute Maximum Ratings1
Symbol
Parameter
Value
Vcc1, Vcc2
Vref
Vmode
Pin
Tstg
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
5.0
2.6 to 3.5
3.5
+10
-55 to +150
Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Units
V
V
V
dBm
°C
Electrical Characteristics1
Symbol
Parameter
f Operating Frequency
CDMA/WCDMA Operation
Gp Power Gain
Po Linear Output Power
PAEd
Itot
CDMA
ACPR1
PAEd (digital) @ +28dBm
PAEd (digital) @ +16dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Power Ratio
±1.25MHz Offset
ACPR2 ±2.25MHz Offset
WCDMA Adjacent Channel Leakage Ratio
ACLR1 ±5.00MHz Offset
ACLR2 ±10.00MHz Offset
General Characteristics
VSWR Input Impedance
NF Noise Figure
Rx No Receive Band Noise Power
2fo Harmonic Suppression
3fo-5fo
S
Harmonic Suppression
Spurious Outputs2,3
Ruggedness w/ Load Mismatch3
Tc Case Operating Temperature
DC Characteristics
Iccq Quiescent Current
Iref Reference Current
Icc(off) Shutdown Leakage Current
Min
1850
28
16
-30
Typ
28
23
39
13
470
85
-50
-55
-60
-65
-40
-43
-53
-55
2.0:1
4
-139
-40
-55
25
7
1
Max
1910
2.5:1
-60
10:1
85
5
Units
MHz
Comments
dB
dB
dBm
dBm
%
%
mA
mA
dBc
dBc
dBc
dBc
dBc
dBc
dBc
dBc
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode2.0V
Vmode=0V
Vmode2.0V
Vmode=0V
Vmode2.0V
Po=+28dBm, Vmode=0V
Po=+16dBm, Vmode2.0V
IS-95 A/B Modulation
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode2.0V
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode2.0V
WCDMA Modulation 3GPP
3.2 03-00 DPCCH +1 DCDCH
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode2.0V
Po=+28dBm; Vmode=0V
Po=+16dBm; Vmode2.0V
dB
dBm/Hz
dBc
dBc
dBc
°C
Po+28dBm;
1930 to 1990MHz
Po+28dBm
Po+28dBm
Load VSWR 5.0:1
No permanent damage.
mA Vmode2.0V
mA Po+28dBm
µA No applied RF signal
Notes:
1. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V and load VSWR 1.2:1, unless otherwise noted.
2. All phase angles.
3. Guaranteed by design.
i-L
o
RMPA1963 i-Lo™ Rev. H
2
www.fairchildsemi.com


Part Number RMPA1963
Description CDMA2000-1X and WCDMA Power Amplifier Module
Maker Fairchild Semiconductor
Total Page 7 Pages
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