Datasheet Summary
Advanced Power MOSFET
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 µA (Max.) @ VDS = -250V Low RDS(ON) : 0.549 Ω (Typ.)
1 2 3
BVDSS = -250 V RDS(on) = 0.8 Ω ID = -8.6 A
TO-220
1.Gate 2. Drain 3....
