Datasheet4U Logo Datasheet4U.com

SFP9644 - Advanced Power MOSFET

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 µA (Max. ) @ VDS = -250V Low RDS(ON) : 0.549 Ω (Typ. ) 1 2 3 SFP9644 BVDSS = -250 V RDS(on) = 0.8 Ω ID = -8.6 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Dra.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SFP9644 Power MOSFET VBsemi
SFP9620 Power MOSFET VBsemi
SFP95N03L Logic N-Channel MOSFET SemiWell Semiconductor
SFP-WDM-SM-0120A 100/155Mbps SFP Transceiver ZYTOM
SFP-WDM-SM-0120B 100/155Mbps SFP Transceiver ZYTOM

Other Datasheets by Fairchild (onsemi)

Part Number Description
SFP9640 Advanced Power MOSFET
SFP9640L Advanced Power MOSFET
SFP9610 Advanced Power MOSFET
SFP9614 Advanced Power MOSFET
SFP9620 Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 µA (Max.) @ VDS = -250V Low RDS(ON) : 0.549 Ω (Typ.) 1 2 3 SFP9644 BVDSS = -250 V RDS(on) = 0.8 Ω ID = -8.6 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
Published: |