Datasheet4U Logo Datasheet4U.com

SFR9034 - Advanced Power MOSFET

Features

  • ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max. ) @ VDS = -60V ν Lower RDS(ON) : 0.106 Ω (Typ. ) SFR/U9034 BVDSS = -60 V RDS(on) = 0.14 Ω ID = -14 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Curre.

📥 Download Datasheet

Datasheet preview – SFR9034

📁 Similar Datasheet

  • SFR01505PT - -5A -15V P-Channel Power MOSFET (HiSemicon)
  • SFR01507PT - -7A 15V P-Channel Power MOSFET (HiSemicon)
  • SFR05S40E - 400V SUPER-FAST RECOVERY RECTIFIER (Silan Microelectronics)
  • SFR05S40ETR - 400V SUPER-FAST RECOVERY RECTIFIER (Silan Microelectronics)
  • SFR08S40T2 - 400V SUPER-FAST RECOVERY RECTIFIER (Silan Microelectronics)
  • SFR08S60D - 600V SUPER-FAST RECOVERY RECTIFIER (Silan Microelectronics)
  • SFR08S60DTR - 600V SUPER-FAST RECOVERY RECTIFIER (Silan Microelectronics)
  • SFR08S60F2 - 600V SUPER-FAST RECOVERY RECTIFIER (Silan Microelectronics)
  • SFR08S60T2 - 600V SUPER-FAST RECOVERY RECTIFIER (Silan Microelectronics)
  • SFR101 - SOFT RECOVERY FAST SWITCHING RECTIFIER (MIC)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
Advanced Power MOSFET FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ν Lower RDS(ON) : 0.106 Ω (Typ.) SFR/U9034 BVDSS = -60 V RDS(on) = 0.14 Ω ID = -14 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -60 -14 -9.
Published: |