Fairchild Semiconductor Electronic Components Datasheet

SFU2955 Datasheet

Advanced Power MOSFET

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Advanced Power MOSFET

SFR/U2955

FEATURES

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 10 µA (Max.) @ VDS = -60V

Lower RDS(ON) : 0.22 Ω (Typ.)

BVDSS = -60 V

RDS(on) = 0.3 Ω

ID = -7.6 A

D-PAK I-PAK

Absolute Maximum Ratings

Symbol

VDSS

IDM

VGS

EAS

IAR

EAR

dv/dt

TJ , TSTG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (TC=25oC)

Continuous Drain Current (TC=100oC)

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (TA=25oC) *

Total Power Dissipation (TC=25oC)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8”from case for 5-seconds

1. Gate 2. Drain 3. Source

Value

-60

-7.6

-5.4

+_ 20

-7.6

3.2

-5.5

2.5

0.26

- 55 to +150

300

Units

V/ns

W/oC

Thermal Resistance

Symbol

Characteristic

Typ.

RθJC

RθJA

Junction-to-Case

Junction-to-Ambient *

Junction-to-Ambient

* When mounted on the minimum pad size recommended (PCB Mount).

Max.

3.91

110

Units

oC/W

Rev. B

Fairchild Semiconductor Electronic Components Datasheet

SFU2955 Datasheet

Advanced Power MOSFET

No Preview Available !

SFR/U2955

P-CHANNEL

POWER MOSFET

Electrical Characteristics (TC=25oC unless otherwise specified)

Symbol

BVDSS

∆BV/∆TJ

VGS(th)

IGSS

IDSS

RDS(on)

gfs

Ciss

Coss

Crss

td(on)

td(off)

Qgs

Qgd

Characteristic

Min. Typ. Max. Units

Test Condition

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

-60 -- -- V

-- -0.04 -- V/oC

-2.0 -- -4.0 V

-- -- -100 nA

-- -- 100

-- -- -10

-- -- -100 µA

-- -- 0.3 Ω

-- 3.6 -- Ω

-- 465 600

-- 140 215 pF

-- 40 60

VGS=0V,ID=-250µA

ID=-250µA See Fig 7

VDS=-5V,ID=-250µA

VGS=-20V

VGS=20V

VDS=-60V

VDS=-48V,TC=125oC

VGS=-10V,ID=-3.8A

VDS=-30V,ID=-3.8A

VGS=0V,VDS=-25V,f =1MHz

See Fig 5

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

-- 11 30

-- 21 50

VDD=-30V,ID=-9.4A,

-- 29 65 ns RG=18 Ω

-- 20 50

See Fig 13 O4 O5

Total Gate Charge

Gate-Source Charge

Gate-Drain(“Miller”) Charge

-- 15 19

VDS=-48V,VGS=-10V,

-- 2.9 -- nC ID=-9.4A

-- 6.0 --

See Fig 6 & Fig 12 O4 O5

Source-Drain Diode Ratings and Characteristics

Symbol

ISM

VSD

trr

Qrr

Characteristic

Continuous Source Current

Pulsed-Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Min. Typ. Max. Units

Test Condition

O1 --

-- -7.6

Integral reverse pn-diode

-- -30

in the MOSFET

O4 -- -- -3.8 V TJ=25oC,IS=-7.6A,VGS=0V

-- 80 -- ns TJ=25oC,IF=-9.4A

-- 0.22 -- µC diF/dt=100A/µs

Notes ;

O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

O2 L=2.0mH, IAS=-7.6A, VDD=-25V, RG=27Ω*, Starting TJ =25oC

O3 ISD <_ -9.4A, di/dt <_ 250A/ µs, VDD <_ BVDSS , Starting TJ =25oC

O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_ 2%

O5 Essentially Independent of Operating Temperature

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SFU2955 Datasheet

Advanced Power MOSFET

SFU2955 Datasheet

Advanced Power MOSFET

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