SFR/U2955
P-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-60 -- -- V
-- -0.04 -- V/oC
-2.0 -- -4.0 V
-- -- -100 nA
-- -- 100
-- -- -10
-- -- -100 µA
-- -- 0.3 Ω
-- 3.6 -- Ω
-- 465 600
-- 140 215 pF
-- 40 60
VGS=0V,ID=-250µA
ID=-250µA See Fig 7
VDS=-5V,ID=-250µA
VGS=-20V
VGS=20V
VDS=-60V
VDS=-48V,TC=125oC
O4
VGS=-10V,ID=-3.8A
VDS=-30V,ID=-3.8A
O4
VGS=0V,VDS=-25V,f =1MHz
See Fig 5
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 11 30
-- 21 50
VDD=-30V,ID=-9.4A,
-- 29 65 ns RG=18 Ω
-- 20 50
See Fig 13 O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 15 19
VDS=-48V,VGS=-10V,
-- 2.9 -- nC ID=-9.4A
-- 6.0 --
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- -7.6
Integral reverse pn-diode
A
-- -30
in the MOSFET
O4 -- -- -3.8 V TJ=25oC,IS=-7.6A,VGS=0V
-- 80 -- ns TJ=25oC,IF=-9.4A
-- 0.22 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=2.0mH, IAS=-7.6A, VDD=-25V, RG=27Ω*, Starting TJ =25oC
O3 ISD <_ -9.4A, di/dt <_ 250A/ µs, VDD <_ BVDSS , Starting TJ =25oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_ 2%
O5 Essentially Independent of Operating Temperature
