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SGH23N60UFD - IGBT

General Description

Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses.

UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required.

Key Features

  • High Speed Switching.
  • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A.
  • High Input Impedance.
  • CO-PAK, IGBT with FRD : trr = 42ns (typ. ).

📥 Download Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGH23N60UFD SGH23N60UFD Ultra-Fast IGBT September 2000 IGBT General Description Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A • High Input Impedance • CO-PAK, IGBT with FRD : trr = 42ns (typ.