SGH23N60UFD igbt equivalent, igbt.
* High Speed Switching
* Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A
* High Input Impedance
* CO-PAK, IGBT with FRD : trr = 42ns (typ.)
Applicat.
such as motor control and general inverters where High Speed Switching is required.
Features
* High Speed Switching.
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required.
Features
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