logo

SGH23N60UFD Datasheet, Fairchild Semiconductor

SGH23N60UFD igbt equivalent, igbt.

SGH23N60UFD Avg. rating / M : 1.0 rating-13

datasheet Download

SGH23N60UFD Datasheet

Features and benefits


* High Speed Switching
* Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A
* High Input Impedance
* CO-PAK, IGBT with FRD : trr = 42ns (typ.) Applicat.

Application

such as motor control and general inverters where High Speed Switching is required. Features
* High Speed Switching.

Description

Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features

Image gallery

SGH23N60UFD Page 1 SGH23N60UFD Page 2 SGH23N60UFD Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts