SGM2N60UF Datasheet | Fairchild Semiconductor

Description Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. .. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature . Features - High speed switching - Low saturation voltage : VCE(sat) = 2.1 V @ IC = 1.2A - High input impedance Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. SOT-223 Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC = 25°C Collector Current @ TC = 100°C Pulsed Collector Current Maximum Power Dissipation @ Ta = 25°C - Derate above 25°C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds SGM2N60UF 600 ± 20 2.4 1.2 10 2.1 0.017 -55 to +150 -55 to +150 300 Units V V A A A W W/°C °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Typ. -Max. 60 Units °C/W Notes : (2) Mounted on 1” squre PCB (FR4 or G-10 Material) ©2003 Fairchild Semiconductor Corporation SGM2N60UF Rev.A Electrical Characteristics of the IGBT T Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250u A VGE = 0V, IC = 1m A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 ± 100 V V/°C u A n A On Characteristics VGE(th) .. VCE(sat)...