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SSH6N70A - Advanced Power MOSFET

Datasheet Summary

Features

  • h S a t e e 4U . m o c SSH6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A TO-3P Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ. ) 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Ο Continuous Drain Current (TC=100 C) Drai.

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Datasheet Details

Part number SSH6N70A
Manufacturer Fairchild Semiconductor
File Size 281.47 KB
Description Advanced Power MOSFET
Datasheet download datasheet SSH6N70A Datasheet
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Advanced Power MOSFET w w w .D t a FEATURES h S a t e e 4U . m o c SSH6N70A BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A TO-3P Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.
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