SSI10N60B Datasheet - Fairchild Semiconductor

600V N-Channel MOSFET

SSI10N60B Features

* 9.0A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D2-PAK SSW Series G D S I2-PAK SSI Ser

SSI10N60B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e.

SSI10N60B Datasheet (723.13 KB)

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SSI10N60B

Manufacturer:

Fairchild Semiconductor

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723.13 KB

Description:

600v n-channel mosfet.

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SSI10N60B 600V N-Channel MOSFET Fairchild Semiconductor

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SSI10N60B Features

SSI10N60B General Description

Datasheet Details

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