SSI1N50B Datasheet - Fairchild Semiconductor

520V N-Channel MOSFET

SSI1N50B Features

* 1.5A, 520V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 8.3 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

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* G S D2-PAK SSW Series G D S I2-PAK SSI S

SSI1N50B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e.

SSI1N50B Datasheet (635.97 KB)

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SSI1N50B

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Fairchild Semiconductor

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635.97 KB

Description:

520v n-channel mosfet.

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SSI1N50B 520V N-Channel MOSFET Fairchild Semiconductor

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SSI1N50B Features

SSI1N50B General Description

Datasheet Details

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