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SSI1N60B Datasheet 600v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: SSW1N60B / SSI1N60B November 2001 SSW1N60B / SSI1N60B 600V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, ..

planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

Key Features

  • 1.0A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D2-PAK SSW Series G D S I2-PAK SSI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 10.

More Datasheets from Fairchild (now onsemi)

Part Number Description
SSI1N60A Advanced Power MOSFET
SSI1N50B 520V N-Channel MOSFET
SSI10N60B 600V N-Channel MOSFET
SSI2N60B N-Channel MOSFET
SSI2N80A Advanced Power MOSFET
SSI4N60B 600V N-Channel MOSFET

SSI1N60B Distributor