SSN1N45B Key Features
- 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V Low gate charge ( typical 6.5 nC) Low Crss ( typical 6.5 pF) 100% avalanche test
- Part: SSN1N45B
- Manufacturer: Fairchild (official site)
- Size: 703.81 KB
SSN1N45B Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, .. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for electronic ballasts based on half bridge configuration.