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SSP5N60A - Advanced Power MOSFET

Features

  • ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 25 μA (Max. ) @ VDS = 600V ! Lower RDS(ON) : 1.81Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed ① Gate-to-Source Voltage Single Pulsed Avalanche Energy.

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Advanced Power MOSFET SSP5N60A FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 25 μA (Max.) @ VDS = 600V ! Lower RDS(ON) : 1.81Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed ① Gate-to-Source Voltage Single Pulsed Avalanche Energy ② Avalanche Current ① Repetitive Avalanche Energy ① Peak Diode Recovery dv/dt ③ Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
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