Datasheet4U Logo Datasheet4U.com

SSS10N60A Datasheet - Fairchild Semiconductor

Advanced Power MOSFET

SSS10N60A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSS10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 5.1 A TO-220F 1 2 3 1.Gate 2. Drain 3. S

SSS10N60A Datasheet (288.44 KB)

Preview of SSS10N60A PDF

Datasheet Details

Part number:

SSS10N60A

Manufacturer:

Fairchild Semiconductor

File Size:

288.44 KB

Description:

Advanced power mosfet.

📁 Related Datasheet

SSS10N60 N-CHANNEL MOSFET (Tuofeng)

SSS10N60B N-Channel MOSFET (Fairchild Semiconductor)

SSS1004 N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)

SSS1004 N-Channel MOSFET (GOOD-ARK)

SSS1004A7 N-Channel enhancement mode power field effect transistors (Silikron Semiconductor)

SSS1004AL MOSFET (Silikron)

SSS1004L MOSFET (Silikron)

SSS10R20BFU MOSFET (Silikron)

SSS10R20DFU MOSFET (Silikron)

SSS1206 N-Channel MOSFET (GOOD-ARK)

TAGS

SSS10N60A Advanced Power MOSFET Fairchild Semiconductor

Image Gallery

SSS10N60A Datasheet Preview Page 2 SSS10N60A Datasheet Preview Page 3

SSS10N60A Distributor