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SSS4N60B Straight 1-Row BergStik II Headers

SSS4N60B Description

SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

SSS4N60B Features

* 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Ser

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Datasheet Details

Part number
SSS4N60B
Manufacturer
Fairchild Semiconductor
File Size
890.06 KB
Datasheet
SSS4N60B_FairchildSemiconductor.pdf
Description
Straight 1-Row BergStik II Headers

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Straight 1-Row BergStik Headers Fairchild Semiconductor
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