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SSS4N80AS - Straight 1-Row BergStik II Headers

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 800V Low RDS(ON) : 2.450 Ω (Typ. ) SSS4N80AS BVDSS = 800 V RDS(on) = 3.0 Ω ID = 2.8 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) D.

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 2.450 Ω (Typ.) SSS4N80AS BVDSS = 800 V RDS(on) = 3.0 Ω ID = 2.8 A TO-220F 1 2 3 1.Gate 2. Drain 3.
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