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SSS4N80AS Straight 1-Row BergStik II Headers

SSS4N80AS Description

Advanced Power MOSFET .

SSS4N80AS Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 800V Low RDS(ON) : 2.450 Ω (Typ. ) SSS4N80AS BVDSS = 800 V RDS(on) = 3.0 Ω ID = 2.8 A TO-220F 1 2 3 1.Gate 2. Drain 3. S

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Datasheet Details

Part number
SSS4N80AS
Manufacturer
Fairchild Semiconductor
File Size
158.42 KB
Datasheet
SSS4N80AS_FairchildSemiconductor.pdf
Description
Straight 1-Row BergStik II Headers

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Straight 1-Row BergStik Headers Fairchild Semiconductor
Fairchild Semiconductor SSS4N80AS-like datasheet