SSS6N90A Datasheet Advanced Power MOSFET

Manufacturer: Fairchild (now onsemi)

Datasheet Details

Advanced Power MOSFET.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 900V Low RDS(ON) : 1.829 Ω (Typ. ) SSS6N90A BVDSS = 900 V RDS(on) = 2.3 Ω ID = 3.5 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Dr.

Brand Logo	Part Number	Description	Manufacturer
	SSS6N90A	Advanced Power MOSFET	Sansung Semiconductor
	SSS6N90C	N-Channel 900V Power MOSFET	VBsemi

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