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SSW1N50B 520V N-Channel MOSFET

SSW1N50B Description

SSW1N50B / SSI1N50B SSW1N50B / SSI1N50B 520V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

SSW1N50B Features

* 1.5A, 520V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 8.3 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D2-PAK SSW Series G D S I2-PAK SSI S

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520V N-Channel MOSFET Fairchild Semiconductor
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