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SSW1N60A Advanced Power MOSFET

SSW1N60A Description

Advanced Power MOSFET .

SSW1N60A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ. ) SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2.

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Advanced Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor SSW1N60A-like datasheet