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SSW1N60B 600V N-Channel MOSFET

SSW1N60B Description

SSW1N60B / SSI1N60B November 2001 SSW1N60B / SSI1N60B 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

SSW1N60B Features

* 1.0A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D2-PAK SSW Series G D S I2-PAK SSI Series G! !

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600V N-Channel MOSFET Fairchild Semiconductor
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