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SSW4N60B 600V N-Channel MOSFET

SSW4N60B Description

SSW4N60B / SSI4N60B November 2001 SSW4N60B / SSI4N60B 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

SSW4N60B Features

* 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D2-PAK SSW Series G D S I2-PAK SSI Series G! !

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600V N-Channel MOSFET Fairchild Semiconductor
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