Datasheet4U Logo Datasheet4U.com

SSW7N60B 600V N-Channel MOSFET

SSW7N60B Description

SSW7N60B / SSI7N60B November 2001 SSW7N60B / SSI7N60B 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

SSW7N60B Features

* 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 23 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D2-PAK SSW Series G D S I2-PAK SSI Series G! !

📥 Download Datasheet

Preview of SSW7N60B PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • SSW-104-01-T-S - Socket Strip (Samtec)
  • SSW-108 - DC-4 GHz High Isolation GaAs MMIC SPDT Switch (Stanford Microdevices)
  • SSW-124 - DC-6 GHz High Isolation SPDT GaAs MMIC Switch (Stanford Microdevices)
  • SSW-1xx-xx-F-x - Socket Strip (Samtec)
  • SSW-1xx-xx-G-x - Socket Strip (Samtec)
  • SSW-1xx-xx-S-x - Socket Strip (Samtec)
  • SSW-208 - DC-4 GHz High Isolation GaAs MMIC SPDT Switch (Stanford Microdevices)
  • SSW-224 - DC-6 GHZ HIGH ISOLATION SPDT GAAS MMIC SWITCH (Stanford Microdevices)

📌 All Tags

600V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor SSW7N60B-like datasheet