Si9955DY mosfet equivalent, dual n-channel mosfet.
3.0 A, 50 V. RDS(ON) = 0.130 Ω @ VGS = 10 V
RDS(ON) = 0.200 Ω @ VGS = 4.5 V
Low gate charge. Fast switching speed. High power and current handling capability.
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where low in-line power loss and fast switching are required.
Applications Battery switch Load switch Motor contro.
These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for.
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